METAL THIN FILM FLATNESS METHOD
申请公布号:KR930005238(B1)
申请号:KR19900017093
申请日期:1990.10.25
申请公布日期:1993.06.16
发明人:JO, KYONG - SU;KO, CHOL - KI;KIM, HON -DO
分类号:H01L21/28;H01L21/302;H01L21/3065;H01L21/3205;H01L21/768;(IPC1-7):H01L21/76
主分类号:H01L21/28
摘要:The method comprises (a) forming an insulation film (2), on which contact hole (10) is formed, on the upper part of conductive layer (1), (b) depositing a first thin metal film (3) on the insulation layer and on the upper part of the contact hole by 30 % of the total thickness of thin metal films at 150 deg.C in a chamber, and (c) depositing a second thin metal film (4) on the first thin metal film by 70 % of the total thickness of thin metal films at 400 deg.C in another chamber. Before depositing the first thin metal the film insulation film and the contact hole are degassed for about 2 mins at above 400 deg.C and the temperature is lowered to room temperature. Before depositing the second thin metal film, the first thin metal film is heated for about 1 mins at above 400 deg.C.
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