Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer,申请号US19910797614-传众专利搜索

Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer

申请公布号：US5198071(A)

申请号：US19910797614

申请日期：1991.11.25

申请公布日期：1993.03.30

申请人：

APPLIED MATERIALS, INC.

发明人：SCUDDER, LANCE;RILEY, NORMA

分类号：C23C16/02;C23C16/24;C23C16/56;C30B25/02;C30B33/00;H01L21/205

主分类号：C23C16/02

摘要：A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the formation of such an epitaxial layer thereon. In one aspect, such thermal stress is inhibited during the deposition of the epitaxial material by initially reducing the deposition rate to less than 1 mu m per minute or lower until the epitaxial layer reaches a thickness of from about 2 to about 30 mu m. In another aspect of the invention, any bridge materials formed between the wafer and the wafer support, during formation of the epitaxial layer, is removed before the wafer is cooled, i.e., before such bridge materials can induce thermal stress in the wafer during the cooling of the wafer, by post etching the wafer with HCl etching gas after the epitaxial deposition.