,申请号JP19840259752-传众专利搜索

申请公布号：JPH0516660(B2)

申请号：JP19840259752

申请日期：1984.12.08

申请公布日期：1993.03.05

申请人：

NIPPON INTER ELECTRONICS CORP

发明人：TAKANO TADAO;MYAGAWA SEIICHI

分类号：H01L21/322

主分类号：H01L21/322

摘要：PURPOSE:To obtain a high speed semiconductor device with a less leakage current by executing thermal processing under the specified conditions after formation of oxide film repeated during the manufacturing process. CONSTITUTION:An n type epitaxial layer 2 on an n<+> type Si substrate 1 is wet-oxidized to form an SiO2 film 4, it is then gradually cooled up to 600 deg.C from 1,050 deg.C at a rate of 0.5-2 deg.C/min, it is held for 1hr at 600 deg.C, desirably for 30hr. A window 5 is opened and boron (B) is diffused under wet O2 for the specified period at 1,100 deg.C. Similar drop of temperature and annealing are repeated. Next, an n<++> layer 7 is formed under the wet O2 ambience at 1,100 deg.C and the similar temperature drop and annealing are repeated. The killer diffusion is conducted for the specified period using Pt or Cu. According to this method, generation of abnormal point of crystal grating or abnormal stress which will become the nuclei of abnormal concentration of killer impurity and separated precipitation during the killer diffusion can be avoided, a leakage current of apparatus is reduced and yield of high speed semiconductor device can be improved.