FOERFARANDE FOER FRAMSTAELLNING AV ETT MED TEKNETIUM-99M MAERKT ORGANSPECIFIKT AEMNE.

申请公布号：FI920459(A)

申请号：FI19920000459

申请日期：1992.02.03

申请公布日期：1992.08.06

申请人：

HOECHST AKTIENGESELLSCHAFT

发明人：KUHLMANN, LUDWIG;MAYER, ANTON

分类号：A61K39/395;A61K51/00;A61K51/10;A61K51/12;A61P35/00;C07F5/00;G01N33/534;(IPC1-7):G01N/

主分类号：A61K39/395

电子组件、包含其之电子设备及该电子设备之制造方法;ELECTRONIC COMPONENT, ELECTRONIC APPARATUS INCLUDING THE SAME, AND MANUFACTURING METHOD OF THE ELECTRONIC APPARATUS

积体电路（ＩＣ）晶片封装体及插座组件;AN INTEGRATED CIRCUIT (IC) CHIP PACKAGE AND SOCKET ASSEMBLY

积体电路装置及其制造方法;INTEGRATED CIRCUIT DEVICE AND MATHOD FOR MANUFACTURING THE SAME

浅沟槽隔离构造及制造方法;SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF MANUFACTURE

浅沟槽隔离结构暨其形成方法;SHALLOW TRENCH ISOLATION AND METHOD OF FORMING THE SAME

基板处理装置;SUBSTRATE PROCESSING APPARATUS

单晶矽晶圆及其制造与缺陷检测方法;SILICON SINGLE CRYSTAL WAFER, MANUFACTURING METHOD THEREOF AND METHOD OF DETECTING DEFECTS

用于自动辨识因隔离程序事件和系统性潮流而产生的粒子污染的方法和装置;METHOD AND APPARATUS FOR AUTONOMOUS IDENTIFICATION OF PARTICLE CONTAMINATION DUE TO ISOLATED PROCESS EVENTS AND SYSTEMATIC TRENDS

半导体元件与其制法;SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

金属芯锡球及利用它的半导体装置的散热连接结构;METAL CORE SOLDER BALL AND HEAT DISSIPATION STRUCTURE OF SEMICONDUCTOR DEVICE USING THE SAME

在基材中做出贯穿接点的方法以及具有贯穿接点的基材;PROCESS TO PRODUCE AN ELECTRICAL THROUGH-CONTACT IN A SUBSTRATE AND SUBSTRATE WITH AN ELECTRICAL THROUGH-CONTACT

半导体封装件之制法;METHOD OF FORMING SEMICONDUCTOR PACKAGE

使用二维及三维区块之三维平面规划;3D FLOORPLANNING USING 2D AND 3D BLOCKS

可提升拉力、转换效率及开路电压之太阳能电池用导电胶;ELECTROCONDUCTIVE PASTE FOR SOLAR CELL WHICH CAN ENHANCE ADHESION STRENGTH, CONVERSION EFFICIENCY AND OPEN-CIRCUIT VOLTAGE

非挥发性记忆装置

用于非挥发性记忆体效能节流之系统及方法;SYSTEMS AND METHODS FOR NONVOLATILE MEMORY PERFORMANCE THROTTLING

具有双模式插脚输出之快闪记忆体控制器;FLASH MEMORY CONTROLLER HAVING DUAL MODE PIN-OUT

非挥发性记忆体及其操作方法;NONVOLATILE MEMORY AND MANIPULATING METHOD THEREOF

具有资料留存分隔区之快闪记忆体;FLASH MEMORY WITH DATA RETENTION PARTITION

具共用控制端之驱动模组;A DRIVING MODULE WITH A COMMON CONTROL NODE