THIN FILM TRANSISTOR AND MANUFACTURE OF THE SAME,申请号JP19890337367-传众专利搜索

THIN FILM TRANSISTOR AND MANUFACTURE OF THE SAME

申请公布号：JPH03196678(A)

申请号：JP19890337367

申请日期：1989.12.26

申请公布日期：1991.08.28

申请人：

SANYO ELECTRIC CO LTD

发明人：SENOO YUTAKA

分类号：G02F1/1343;G02F1/136;G02F1/1368;H01L29/78;H01L29/786

主分类号：G02F1/1343

摘要：<p>PURPOSE:To prevent shortcircuit between drain and gate of a transistor by depositing at least two layers of insulating film and forming with different etching rate for each insulating film. CONSTITUTION:An insulating film to be formed on a gate electrode 2 of an insulating substrate 1 has at least two layers, and is formed with different etching rates for each of insulating films 3 and 4. The first insulating film 3 formed by passivation etching and slight etching for removing an oxide film on a-Si surface is not eroded by setting an etching rate of the first insulating layer 3 forming the lower layer of two layers of the gate insulating films 3 and 4 smaller than that of the second insulating film 4 forming the upper layer. This can prevent shortcircuit between the drain and gate of a transistor.</p>