Method of using erodable masks to produce partially etched structures in ODE wafer structures,申请号US19890458182-传众专利搜索

Method of using erodable masks to produce partially etched structures in ODE wafer structures

申请公布号：US4957592(A)

申请号：US19890458182

申请日期：1989.12.27

申请公布日期：1990.09.18

申请人：

XEROX CORPORATION

发明人：O'NEILL, JAMES F.

分类号：B41J2/05;B41J2/16;H01L21/308

主分类号：B41J2/05

摘要：The thermal ink jet silicon wafer printhead is formed in a single etching operation by partially etching into one portion of the wafer while at the same time completely etching through another portion of the wafer. An erodable mask layer is used to delay etching of partially etched regions in the wafer, the depth of the etching being defined by the etch time after the removal of the erodable masking layer, or by the V-groove termination as determined by via opening.