DENSHISHASHINKANKOTAI,申请号JP19840274419-传众专利搜索

DENSHISHASHINKANKOTAI

申请公布号：JPH0239787(B2)

申请号：JP19840274419

申请日期：1984.12.28

申请公布日期：1990.09.07

申请人：

NIPPON MINING CO

发明人：ODA OSAMU;ONOZUKA ARATA;KOYAMA AKIO

分类号：G03G5/08;G03G5/082

主分类号：G03G5/08

摘要：PURPOSE:To obtain a photosensitive material causing small dark attenuation and having low residual potential by simultaneously adding arsenic and oxygen to selenium. CONSTITUTION:To selenium are added 10-10,000ppm arsenic and 1-1,000ppm oxygen. Oxygen is added so as to reduce the residual potential, bud >1,000ppm oxygen is liable to cause bumping during vapor deposition and makes a vapor- deposited film defective. Arsenic is added according to the amount of oxygen added so as to prevent principally deterioration in the dark attenuation characteristics. By the synergism of 1-1,000ppm oxygen and 10-10,000ppm arsenic the residual potential can be reduced while satisfactory dark attenuation characteristics are maintained. Oxygen is added in the form of SeO2 of a mother alloy of Se-SeO2 or by bubbling.