MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19870232821-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：JPS6474752(A)

申请号：JP19870232821

申请日期：1987.09.17

申请公布日期：1989.03.20

申请人：

MATSUSHITA ELECTRIC IND CO LTD

发明人：AOI NOBUO;DANSUI YOSHITAKA;KUBOTA MASABUMI

分类号：H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108

主分类号：H01L27/04

摘要：PURPOSE:To increase remarkedly the surface area of a capacitor plate and to obtain a sufficient capacity even in a fine area by a method wherein a roughness is provided on the capacitor plate itself. CONSTITUTION:A first oxide film 7, a first poly-Si film 8, a second oxide film 9 and a second poly-Si film 10 are each deposited on a MOS transistor formed on an Si substrate by a known method in a desired thickness by a CVD method. The poly-Si film 10 is etched by anisotropic etching and is made to remain only on the sidewall part of the film 9. Then, after the film 9 only is selectively removed by etching of a high selection ratio to polysilicon, a capacitor oxide film is deposited by a CVD method or a thermal oxidation method. Then, a third poly-Si film 12 is deposited in a desired thickness by a CVD method and is patterned by a photolithographic method to form a capacitor. Thereby, a capacity of 4 times or thereabouts compared to the conventional capacitor of the same area as that of the capacitor can be obtained.