COMPLEMENTARY SEMICONDUCTOR DEVICE,申请号JP19870146217-传众专利搜索

COMPLEMENTARY SEMICONDUCTOR DEVICE

申请公布号：JPS63311770(A)

申请号：JP19870146217

申请日期：1987.06.13

申请公布日期：1988.12.20

申请人：

FUJITSU LTD

发明人：HIKOSAKA YASUMI

分类号：H01L27/095;H01L21/338;H01L27/06;H01L29/778;H01L29/80;H01L29/812

主分类号：H01L27/095

摘要：PURPOSE:To enable integration to be easily performed by a method wherein an n-channel transistor section and a p-type channel transistor section are composed by using a specified distorted layer. CONSTITUTION:An n-channel transistor section which is provided with a layered structure that sandwiches a channel layer consisting of n-type Inx-Ga1-xAs (n-type InxGa1-xAs channel layer 2n) with i-type GaAs or i-type semiconductor (an i-type GaAs substrate 1 and an n-type GaAs gate insulating layer 3) proximate in a lattice constant to it and a p-channel transistor section which is provided with a layered structure that sandwiches a channel layer consisting of a p-type InxGa1-xAs with i-type GaAs or i-type semiconductor proximate in lattice constant to it are provided. By these processes, the balance between the n-channel transistor section and the p-channel transistor section is kept adequate and the device can be improved in operational speed and integration with ease.