POSITIVE TYPE PHOTORESIST,申请号JP19860309780-传众专利搜索

POSITIVE TYPE PHOTORESIST

申请公布号：JPS63159843(A)

申请号：JP19860309780

申请日期：1986.12.24

申请公布日期：1988.07.02

申请人：

JAPAN SYNTHETIC RUBBER CO LTD

发明人：YOSHIMOTO HIROSHI;NEMOTO HIROAKI;NOZUE IKUO;MIURA TAKAO

分类号：G03C1/00;G03C1/72;G03F7/004;G03F7/022

主分类号：G03C1/00

摘要：PURPOSE:To prevent the halation of the titled resist and to improve the degree of the development of the titled resist by incorporating a prescribed amount of a compd. having a specific skeleton to the positive type photoresist which contains an alkali soluble novolak resin and 1,2-quinone diazide compd. CONSTITUTION:The titled resist contains 100pts.wt. of the alkali soluble novolak resin and 10-50pts.wt. of 1,2-quinone diazide compd. as the positive type photoresist suitable for the production of an integrated circuit, and contains 0.5-5pts.wt., of the compd. having the skeleton shown by the formula as an light absorbing material. In the formula, Z is a substd. or an unsubstd. pyrazole ring or a substd. or an unsubstd. imidazole ring. Thus, the titled resist capable of preventing the halation and having improved resolution, without lowering sensitivity is obtd.