ETCHANT FOR SELECTIVELY ETCHING PATTERNS IN THIN SILICON DIOXIDE LAYERS AND METHOD OF PREPARING SUCH AN ETCHANT,申请号USD3671437-传众专利搜索

ETCHANT FOR SELECTIVELY ETCHING PATTERNS IN THIN SILICON DIOXIDE LAYERS AND METHOD OF PREPARING SUCH AN ETCHANT

申请公布号：US3671437(A)

申请号：USD3671437

申请日期：1970.10.16

申请公布日期：1972.06.20

申请人：

U.S. PHILIPS CORP.

发明人：UWE PLESS

分类号：C01B33/12;H01L21/308;H01L21/311;(IPC1-7):C23D1/00

主分类号：C01B33/12

摘要：This disclosure is directed to an aqueous etching composition for silicon dioxide based on ammonium fluoride and hydrofluoric acid to which an arsenic or thallium salt has been added and to a method of etching layers of silicon dioxide by means of said etching composition.