Ferroelectric liquid crystal polymer.
申请公布号:EP0228703(A2)
申请号:EP19860118019
申请日期:1986.12.23
申请公布日期:1987.07.15
发明人:UCHIDA, SHUNJI;MORITA, KAZUHARU;HASHIMOTO, KENJI
分类号:C08F20/30;C09K19/38;G02F1/1333;(IPC1-7):C09K19/38
主分类号:C08F20/30
摘要:<p>A ferroelectric liquid crystal polymer comprising the recurring units represented by the following general formula; <Chemistry id="chema01" num="0001"><Image id="ia01" he="15" wi="37" file="IMGA0001.TIF" imgContent="chem" imgFormat="TIFF" inline="no" /></Chemistry>in which <UnorderedLists id="ula01" listStyle="none"><ListItem>k is an integer of from 1 to 30, <Chemistry id="chema02" num="0002"><Image id="ia02" he="14" wi="102" file="IMGA0002.TIF" imgContent="chem" imgFormat="TIFF" inline="no" /></Chemistry></ListItem><ListItem>R<Sub>2</Sub> is -COOR<Sub>3</Sub>, -OCOR<Sub>3</Sub>, -OR<Sub>3</Sub>, or -R<Sub>3</Sub>, in which</ListItem><ListItem>R<Sub>3</Sub> is <Chemistry id="chema03" num="0003"><Image id="ia03" he="15" wi="43" file="IMGA0003.TIF" imgContent="chem" imgFormat="TIFF" inline="no" /></Chemistry></ListItem><ListItem>R<Sub>4</Sub> is -CH<Sub>3</Sub> or Cl,</ListItem><ListItem>m is 0 or an integer of from 1 to 10,</ListItem><ListItem>n is 0 or an integer of from 1 to 10, provided that n is not 0,</ListItem><ListItem>when R<Sub>4</Sub> is -CH<Sub>3</Sub>.</ListItem></UnorderedLists></p><p>The ferroelectric liquid crystal polymer of the present invention not only exhibits a ferroelectricity even at temperatures in the vicinity of a room temperature, but also has so fast response speed to the external factors as to be able to display motion pictures, and may be advantageously used as display elements for large size screens and a curved screens.</p>
FRAME SYNCHRONIZING SYSTEM FOR LOOP-TYPE COMMUNICATION NETWORK
MANUFACTURE OF THIN FILM TRANSISTOR
SILANE-MODIFIED ETHYLENE COPOLYMER, ITS PRODUCTION AND ADHESIVE COMPRISING SAID COPOLYMER
CONTROL OF CONVEYANCE OF GREEN TIRE
MANUFACTURE OF HEAT RESISTANT RESIN FILM
DRIVING METHOD FOR STEPPING MOTOR FOR FLOPPY DISK DRIVE
MANUFACTURE OF THIN FILM TRANSISTOR
SEMICONDUCTOR LIGHT RECEIVING DEVICE
FORMATION OF SEMICONDUCTOR ELEMENT