WAVELENGTH SELECTIVE PHOTODETECTOR DEVICE,申请号JP19830176366-传众专利搜索

WAVELENGTH SELECTIVE PHOTODETECTOR DEVICE

申请公布号：JPS6068676(A)

申请号：JP19830176366

申请日期：1983.09.26

申请公布日期：1985.04.19

申请人：

NIPPON DENSHIN DENWA KOSHA

发明人：HATA SUSUMU;MOTOSUGI TSUNEJI;NAGAI HARUO;KURUMADA KATSUHIKO

分类号：H01L31/10;H01L31/111

主分类号：H01L31/10

摘要：PURPOSE:To provide the wavelength selecting function of two or more wavelengths by providing a photowaveguide and a P-N junction on a substrate. CONSTITUTION:An optical beam incident from one end A' to a semiconductor layer 23 is propagated through semiconductor layers 23, 26, 23, 27, 23. At this time, since the absorption end wavelength of the layer 26 is 2.3 microns, the light which has 1.3 microns or less of the wavelength of the incident beam is produced as an electric signal 41 at electrodes 30, 32. An electric signal 40 is absorbed to the layer 23, but no producing electrodes are provided, and it cannot be accordingly produced. An electric signal 42 is absorbed to the layer 27, and produced at electrodes 31, 32. In the example as shown, only two semiconductor absorption layers 26, 27 for producing a signal are provided, but electric signals 43, 44 may be produced by adding them.