PRESSURE SENSING TRANSISTOR,申请号JP19850268636-传众专利搜索

PRESSURE SENSING TRANSISTOR

申请公布号：JPS62128568(A)

申请号：JP19850268636

申请日期：1985.11.29

申请公布日期：1987.06.10

申请人：

FUJI ELECTRIC CO LTD

发明人：NAGAYASU YOSHIHIKO;KAMIJIYOU TAKETOMO

分类号：H01L29/84;G01L1/00

主分类号：H01L29/84

摘要：PURPOSE:To provide a pressure sensing transistor which has a high sensitivity and good reproducibility and utilizes an anisotropic stress effect by a method wherein a recessed part is formed in one of the surface of a semiconductor substrate and an emitter-base junction is formed in parallel to the recessed part surface and a pressure unit which touches the surface of the substrate except the recessed part is provided. CONSTITUTION:When a pressure unit 5 is contacted with the top surface of a substrate 1 in which a P-type base layer 3 and an N-type emitter layer 4 are formed in parallel to the surface of a groove 2 and a pressure is applied to the direction given by an arrow 6, in addition to a stress component vertical to the substrate surface, stress components vertical to both sides of the junction planes are induced near the bottom 7 of a V-shape emitter-base junction and the stress applied to this part of the emitter-base junction becomes substantially larger than the stress applied to the other parts so that a large variation in a collector current induced by an anisotropic stress effect can be obtained.