AMORPHOUS SILICON ELECTROPHOTOGRAPHIC SENSITIVE BODY,申请号JP19850264547-传众专利搜索

AMORPHOUS SILICON ELECTROPHOTOGRAPHIC SENSITIVE BODY

申请公布号：JPS62124562(A)

申请号：JP19850264547

申请日期：1985.11.25

申请公布日期：1987.06.05

申请人：

MITSUBISHI CHEM IND LTD

发明人：YOSHITOMI TOSHIHIKO;HORIUCHI HIROSHI;YAMAGUCHI YUKIO;KAMOSHITA YASUO

分类号：G03G5/08;G03G5/082;G03G21/00

主分类号：G03G5/08

摘要：PURPOSE:To obtain the titled body having a less tendency for generating phenomenon which can not give an image at all, namely an image run in a high humidity atomosphere by controlling the variance or the average roughness of a center line on a surface to <=100Angstrom measured by coordinate measuring by means of a coordinate measured by coordinate measuring by means of a coordinate measuring scanning electron microscope and a cross section measuring apparatus. CONSTITUTION:The surface roughness of the sensitive body due to polishing is controlled by a polishing period, if polishing conditions such as a pressure, etc, are a prescribed value. When the polishing period is too long, the roughness of the surface depresses. If the variance of the average roughness of the center line on the surface of the sensitive body is <=110Angstrom , preferably <=80Angstrom , further preferably <=50Angstrom , the remarkable effect is obtd. Thus the a-Si photosensitive body is necessary to satisfy the condition about the distribution of the average roughness of the center line, but, it is preferable to satisfy the following condition, namely the average of the optional then measurements about the average of the roughness R(a) of the center line is <=90Angstrom , preferably <=60Angstrom , further preferably <=30Angstrom , and the average of the optional ten measurements about the max. amplitude is <=500Angstrom , preferably <=350Angstrom , further preferably <=200Angstrom .