CHARGED BEAM PATTERNING METHOD,申请号JP19850114812-传众专利搜索

CHARGED BEAM PATTERNING METHOD

申请公布号：JPS61272924(A)

申请号：JP19850114812

申请日期：1985.05.28

申请公布日期：1986.12.03

申请人：

TOSHIBA CORP

发明人：TAKIGAWA TADAHIRO;WADA KANJI;TAMAMUSHI SHUICHI

分类号：H01J37/147;H01J37/305;H01L21/027;H01L21/30

主分类号：H01J37/147

摘要：PURPOSE:To perform a patterning in a highly precise manner by a method wherein a multipolar deflector, having the deflecting distortion smaller than that of a paralleled flat plate electrode and relatively large distance between electrode plates, is used as the reflector to be used for variation of beam size, thereby enabling to reduce the deflective distortion for the variation in size and shape of the beam. CONSTITUTION:The aperture mask 21 to be used for formation of the first beam is arranged between lenses 12 and 13, and the aperture mask 22 to be used for formation of the second beam is arranged between lenses 13 and 14. An octapole deflector (multipolar deflector) 23 to be used to deflect the beam is arranged between the lens 13 and a mask 21. The center of deflection of a deflector 23 is single, and the beam is deflected in the prescribed direction by the deflecting voltage X and Y. The optical overlapping of the apertures 21a and 22a of the masks 21 and 22 is changed by the above-mentioned deflection. As a result, the degree of deflective distortion for the variation of the size and the shape of the beam becomes smaller, thereby enabling to perform a patterning in a highly precise manner.