PV TYPE INFRARED DETECTING ELEMENT,申请号JP19850109429-传众专利搜索

PV TYPE INFRARED DETECTING ELEMENT

申请公布号：JPS61268075(A)

申请号：JP19850109429

申请日期：1985.05.23

申请公布日期：1986.11.27

申请人：

FUJITSU LTD

发明人：MAEKAWA TORU

分类号：H01L27/14;H01L31/10;H01L31/103

主分类号：H01L27/14

摘要：PURPOSE:To reduce thermal noises by forming a mesa section up to a section having a large x value in the vicinity of the interface from the surface of a Hg1-xCdxTe crystal layer on a crystal substrate and shaping a P-N junction in depth, which does not reach the crystal substrate, to the mesa section and the periphery of the mesa section. CONSTITUTION:A Hg1-xCdxTe crystal layer 2 is grown on a CdTe crystal substrate 1 in an epitaxial manner. A mesa section 4 is formed through etching up to a section having a large x value in the vicinity of the interface from the surface of the Hg1-xCdxTe crystal layer 2. A P-N junction is shaped in depth, which does not reach the CdTe crystal substrate 1, to the mesa section 4 and the periphery of the mesa section. Accordingly, the flowing of surface leakage-currents can be prevented without taking a measure, such as the formation of a guard-ring, the optimization of processes or the like, thus reducing thermal noises.