MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19820103311-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：JPS58220429(A)

申请号：JP19820103311

申请日期：1982.06.16

申请公布日期：1983.12.22

申请人：

TOKYO SHIBAURA DENKI KK

发明人：OKUTSU KINNOSUKE;TAKAHASHI HIDEKAZU

分类号：H01L21/302;H01L21/304;H01L21/3065;(IPC1-7):01L21/302

主分类号：H01L21/302

摘要：PURPOSE:To obtain a highly pure surface by making a resist pattern react with oxygen plasma to decompose and vaporize the pattern and then treating the wafer surface with pure water after forming electrodes and a wiring pattern and when removing photo-resist pattern used in this forming. CONSTITUTION:An aluminium film is covered on the whole surface of a semiconductor wafer, and the film is covered with a mask of resist pattern of a specified shape, and selective etching is conducted to obtain a wiring pattern. Next, the resist on the wiring pattern is removed as follows. The wafer is received in a plasma etching device and the wafer is exposed to oxygen plasma atmosphere for 30min to decompose and remove the resist pattern. Next, the wafer is taken out of the etching device and transferred to a carrier, and then it is cleaned with pure water. In this way high cleanliness is obtained without any damage to the ground metal.