PLASMA REACTOR APPARATUS AND PROCESS FOR THE PLASMA ETCHING OF A WORKPIECE IN SUCH A REACTOR APPARATUS,申请号DE19803064737-传众专利搜索

PLASMA REACTOR APPARATUS AND PROCESS FOR THE PLASMA ETCHING OF A WORKPIECE IN SUCH A REACTOR APPARATUS

申请公布号：DE3064737(D1)

申请号：DE19803064737

申请日期：1980.04.23

申请公布日期：1983.10.13

申请人：

TEGAL CORPORATION

发明人：GORIN, GEORGES J., DR.;HOOG, JOSEF T.

分类号：C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H01J37/32

主分类号：C23F4/00

摘要：A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as both a gas distribution manifold for uniformly injecting reactant gases into the reaction volume and as an exhaust manifold for uniformly withdrawing reaction products from the reaction volume. The two electrodes are so configured that the plasma reaction takes place only between the electrodes; there is no inactive space surrounding the electrodes to fill with plasma. The configuration is thus conservative of both reactants and energy. The bottommost plate which serves as a workpiece holder is movable with respect to the upper plate to permit loading and unloading of workpieces. The uppermost plate is the active RF electrode while the workpiece holder is maintained at a RF ground potential. The uppermost plate has a larger electrode area which effectively imposes a dc offset to the RF field which enhances the uniformity of the etching and decreases the undesirable spread of undercut etching.