NEGATIVE TYPE RESIST MATERIAL,申请号JP19810214811-传众专利搜索

NEGATIVE TYPE RESIST MATERIAL

申请公布号：JPS58116531(A)

申请号：JP19810214811

申请日期：1981.12.29

申请公布日期：1983.07.11

申请人：

FUJITSU KK

发明人：TODA KAZUO;FUJINO KATSUHIRO;TAKECHI SATOSHI

分类号：G03F7/004;G03C1/72;G03F7/038

主分类号：G03F7/004

摘要：PURPOSE:To obtain a resist material suitable for forming a micropattern for fabrication of a semiconductor device, by adding an alkali-soluble polymer, and an alkali-soluble compd. insolubilizing said polymer in alkali by irradiation of high energy radiation. CONSTITUTION:A photosensitive material composn. contains in combination an alkali-soluble polymer, such as phenolic novolak resin or styrene-acrylic copolymer; and a compd. acting as a photosensitive agent, capable of insolubilizing said polymer in alkali by irradiation of high energy radiation, and having an organic acid group soluble in alkali in itself. A negative type resist layer is formed by coating a substrate such as silicon wafer, with said composn. This photoreceptor is patternwise exposed and developed with an aq. alkaline soln., resulting in forming an ultrafine pattern superior in resolution with high sensitivity without swelling in developing.