SEMICONDUCTOR PHOTOELECTRIC CONVERTER,申请号JP19810071717-传众专利搜索

SEMICONDUCTOR PHOTOELECTRIC CONVERTER

申请公布号：JPS57187976(A)

申请号：JP19810071717

申请日期：1981.05.13

申请公布日期：1982.11.18

申请人：

MATSUSHITA DENKI SANGYO KK

发明人：TERUI YASUAKI

分类号：H01L27/146

主分类号：H01L27/146

摘要：PURPOSE:To improve the coupling with a solid state scanning circuit by a method wherein the resistivity of the first amorphous Si film on metal electrodes is made low and amorphous Si regions of very high resistivity is provided between the metal electrodes for improvement of element separation efficiency. CONSTITUTION:The first and the third amorphous Si films 26 and 28 are generally have lower resistivity than the second intrinsic amorphous Si film 27. This relation is necessary especially in order not only to generate pairs of electron- positive hole by light incidence but also to avoid thermal injection of electrons or positive holes from electrodes. But this requirement is contrary to the requirements of separation between elements. Then, the regions of the film 26 on the metal electrodes are given low resistivity and the amorphous Si regions of very high resistivity are provided between the electrodes 25 for improvement of lement separation efficiency. In other words, high resistivity regions 30 are provided for element separation. This region 30 formed by injecting P-type impurity ion into a part of the film 26 selectively and making the resistivity of the part of the film 26 higher selectively by negating N-type impurity in that part.