EXPOSURE METHOD FOR ELECTRON BEAM,申请号JP19800096040-传众专利搜索

EXPOSURE METHOD FOR ELECTRON BEAM

申请公布号：JPS5721818(A)

申请号：JP19800096040

申请日期：1980.07.14

申请公布日期：1982.02.04

申请人：

NIPPON ELECTRON OPTICS LAB

发明人：WATANABE EIJI

分类号：H01L21/027;H01J37/317;(IPC1-7):01L21/30

主分类号：H01L21/027

摘要：PURPOSE:To obtain the position of a field precisely without increasing the number of marks formed in the respective fields by calculating the coordinates by a computer. CONSTITUTION:A plurality of marks M1-M10 are formed separately from chips of fields F1-F9 (small regions drawn by the electron beam deflection in the chips of the wafer) at the periphery of the chips. These mark part is scanned by the electron beam, and a plurality of mark positions are obtained by detecting the secondary electorns or reflected electrons generated thereat. Then, the coordinates of the positions of the mark thus measured is stored in a computer, is calculated by the computer, and the coordinates of the positions of the respective fields are calculated. Thus, the error of the detecting positions at the mark detecting time can be cancelled, and the position of the field can be precisely obtained.