SEMICONDUCTOR LIGHT EMITTING DEVICE,申请号JP19800082448-传众专利搜索

SEMICONDUCTOR LIGHT EMITTING DEVICE

申请公布号：JPS577984(A)

申请号：JP19800082448

申请日期：1980.06.18

申请公布日期：1982.01.16

申请人：

NIPPON TELEGRAPH & TELEPHONE

发明人：NAGAI HARUO;TAKASHIDE KENICHIROU;NAKANO YOSHINORI;NOGUCHI ETSUO;KAWAGUCHI HITOSHI

分类号：H01L33/30;H01S5/00

主分类号：H01L33/30

摘要：<p>PURPOSE:To emit light efficiently by a method wherein the light to be propagated is confined in a semiconductor layer as an active layer and it is propagated in a narrow-beamed form. CONSTITUTION:A semiconductor layer 63, consisting of a semiconductor layers 53 and 57 as active layers, and a semiconductor layer 57 as a clad layer, consisting of a semiconductor layer 64 formed by semiconductor layers 47, 51, 52, 54, 56 and 58, are formed on a substrate 41 in such manner that the semiconductor layer 63, as an active layer when it is seen from the side of section, is surrounded both in the direction of thickness and in the direction of layer by the semiconductor 64 as a clad layer. By connecting the power source, whereon the negative is given to the side of an electrode 62, is connected in between electrodes 61 and 62, light emission is obtained mainly in the vicinity of a P-N junction 60 in the semiconductor region 55 as the active layer, the emitted light is completely confined by the semiconductor layer 64 and propagated in the semiconductor layer 63.</p>