SEMICONDUCTOR DEVICE,申请号JP19790127640-传众专利搜索

SEMICONDUCTOR DEVICE

申请公布号：JPS5650534(A)

申请号：JP19790127640

申请日期：1979.10.02

申请公布日期：1981.05.07

申请人：

MITSUBISHI ELECTRIC CORP

发明人：WATARI YOSHIHIKO

分类号：H01L29/73;H01L21/331;H01L21/768;H01L23/522;H01L29/72

主分类号：H01L29/73

摘要：PURPOSE:To prevent the cracks in an insulating film of glass coating even though thermal stress is applied, by removing a part of the glass on the wiring part of a wiring metal layer of an insulating layer for glass coating and forming the openings. CONSTITUTION:A base region 2 and an emitter region 3 are formed on the main surface of a semiconductor substrate 1. An insulating film 4 is further formed; an emitter opening 4a and a base opening which is not shown are provided; and an emitter-wiring metal layer 5 and a base-wiring metal layer 6 are formed. An insulating film 7 as a glass coating is formed on the entire surface, and openings 9 and 11 are provided on wiring portions 5b and 6b, in addition to bonding openings 8 and 10. Therefore, the stress caused by the difference in thermal expansion coefficients of the wiring metals 5 and 6 and an insulating film 7 is decreased by the openings 9 and 11, and the cracks which will be generated in the insulating film 7 can be prevented.