SEMICONDUCTOR LASER,申请号JP19790062175-传众专利搜索

SEMICONDUCTOR LASER

申请公布号：JPS55154792(A)

申请号：JP19790062175

申请日期：1979.05.22

申请公布日期：1980.12.02

申请人：

NIPPON ELECTRIC CO

发明人：RANGU HIROYOSHI

分类号：H01S5/00;H01S5/223

主分类号：H01S5/00

摘要：PURPOSE:To obtain stable lateral mode laser by epitaxially growing a light oozing layer having larger refractive index than the clad layer formed hereinafter on a semiconductor substrate, perforating a groove reaching the substrate thereat and laminating first and second clad layers via an active layer on the entire surface. CONSTITUTION:When a P-type In1-xGaxAsyP1-y layer 13 is epitaxially grown to become a light oozing layer on an N-type InP substrate 11, the refractive index of the layer 13 is so selected as to be larger than that of first clad layer 14 of N-type InP formed thereon. Then, the layer 13 is etched selectively in stripe state to form a groove 12 inserted into the surface of the substrate 11. Thereafter, there are epitaxially grown an N-type InP first clad layer 14, an N-type or a P-type active layer 15, a P-type InP second clad layer 16 on the entire surface including the groove 12, a P-type layer 17 for easily forming an electrode on the layer 16, with a negative electrodes mounted on the back surface of the substrate 11 or positive electrode on the layer 17.