PRODUCTION OF FIELD EFFECT TRANSISTOR
申请公布号:JPS53135284(A)
申请号:JP19770050232
申请日期:1977.04.30
申请公布日期:1978.11.25
发明人:SAKAI KIYOSHI
分类号:H01L21/336;H01L29/417;H01L29/78
主分类号:H01L21/336
摘要:PURPOSE:to prodece a high-performence cascode-connection FET unit with avoiding the trouble of positioning accuracy by providing a ring-shaped or comb-shaped P-type layer on the N-type epi-layer and forming N-type islands between N-type layers by diffusion simultaneously with providing N-type layers in the P-type layer.