Novel integrated circuit and method of manufacturing same,申请号US19760680572-传众专利搜索

Novel integrated circuit and method of manufacturing same

申请公布号：US4069493(A)

申请号：US19760680572

申请日期：1976.04.26

申请公布日期：1978.01.17

申请人：

THOMSON-CSF

发明人：BOBENRIETH, ALBERT

分类号：H01L21/266;H01L21/76;H01L27/00;H01L27/07;H01L27/12;H01L29/808;(IPC1-7):H01L29/80;H01L29/48;H01L27/02;H01L29/78

主分类号：H01L21/266

摘要：An integrated circuit comprises a high-resistivity substrate 1 which virtually insulates the various integrated components of the circuit from one another and reduces the parasitic capacitances. This components are constituted by ion implantation through high-precision masks, without exceeding 800 DEG C in temperature. This is the case with the source 3, the gate 9 and the drain 4, of the field-effect transistor (shown in FIG. 1).