Passivation and sealing of semiconductor elements - using thin layer of glass obtd. by high frequency sputtering,申请号DE19772724348-传众专利搜索

Passivation and sealing of semiconductor elements - using thin layer of glass obtd. by high frequency sputtering

申请公布号：DE2724348(A1)

申请号：DE19772724348

申请日期：1977.05.28

申请公布日期：1977.12.22

申请人：

DEUTSCHE ITT INDUSTRIES GMBH

发明人：CHARLES KLING,HARRY

分类号：H01L21/3105;H01L21/316;H01L23/31;(IPC1-7):01L23/30

主分类号：H01L21/3105

摘要：<p>Semiconductor element has a substrate contg. >=1 zone of opposite conductivity forming a p-n junction. The substrate surface is covered with a layer (1) of dielectric material through which contacts pass to the zone. On to of layer (1) is a layer (2) of sputtered glass forming a passivating layer and sealing the element. Layer (1) is pref. SiO2 and/or Si3N4, 10,000-20,000 A thick, whereas layer (2) is pref. 10,000-40,000 angstroms thick. In the pref. mfg. process, a layer of glass is used on a target electrode in a high frequency sputtering appts. contg Ar at 10-15 to 10-7 torr, and an electrode for the substrate. The glass is sputtered at 1600-1800 watts and the layer (2) obtd. is subsequently tempered by heat treatment. A thin glass layer is provided without overheating the substrate. The process is faster and less costly than conventional treatments.</p>