MANUFACTURE OF SEMICONDUCTOR DEVICE,申请号JP19830210747-传众专利搜索

MANUFACTURE OF SEMICONDUCTOR DEVICE

申请公布号：JPS60103612(A)

申请号：JP19830210747

申请日期：1983.11.11

申请公布日期：1985.06.07

申请人：

TOSHIBA KK;NIPPON GENSHIRYOKU JIGYO KK

发明人：OOURA JIYUNICHI;ADACHI HAJIME;UEDA KIYOSHI

分类号：H01L29/73;H01L21/26;H01L21/322;H01L21/331

主分类号：H01L29/73

摘要：PURPOSE:To control and reduce the life time of minority carriers in a semiconductor and, at the same time, make slight damages in semiconductor devices by irradiating neutron rays having high kinetic energy exceeding a specific value on the semiconductor devices after completion of high temperature process such as diffusion of impurity atom and so forth. CONSTITUTION:Neutron rays having high kinetic energy exceeding 10keV are irradiated on semiconductor devices of which high temperature processes exceeding 400 deg.C have been completed, and the life time of minority carriers is controlled to reduce thereof in minor damage conditions. The reciprocal of the life time tau of minority carriers in a semiconductor varies in proportion to the number of recombination centers of carriers formed by irradiation of high speed neutron. Furthermore, a damage coefficient K of the life time of minotity carriers in a semiconductor caused by irradiation of radiant rays is proportional to energy of irradiating radiant rays. Accordingly, the damage coefficient K of the life time in the case of irradiation of 1MeV electron rays substantially coincides with that in the case of irradiation of 10keV neutron rays and, therefore, neutron rays have an effect superior to electron irradiation.