X-RAY MASK AND MANUFACTURE AND PATTERN FORMATION METHOD OF X-RAY MASK,申请号JP19920071379-传众专利搜索

X-RAY MASK AND MANUFACTURE AND PATTERN FORMATION METHOD OF X-RAY MASK

申请公布号：JPH0590138(A)

申请号：JP19920071379

申请日期：1992.03.27

申请公布日期：1993.04.09

申请人：

TOSHIBA CORP

发明人：ITO MASAMITSU;SUGIHARA SHINJI;MUROOKA KENICHI

分类号：G03F1/22;H01L21/027

主分类号：G03F1/22

摘要：<p>PURPOSE:To obtain an X-ray mask having an X-ray transmitting film made of SiC whose visible light transmittance is high, by forming a thin film pattern of X-ray absorber and an aluminum oxide film as an antireflection film, on an X-ray transmitting thin film. CONSTITUTION:An X-ray transmitting SiC film 12 is formed on the surface of a silicon substrate. Aluminum oxide 13 as an antireflection film is deposited by a reactive sputtering method. A chromium film 14 is formed on the rear of the silicon substrate 11 by vacuum evaporation. A resist pattern having an aperture part is formed at the central part of the Cr film 14 on the rear. The Cr film 14 is etched by using the resist pattern 15 as a mask. A W film 16 of X-ray absorber is deposited on the SiC film 12 by using a magnetron DC sputtering equipment, and isotropically etched by using an aluminum oxide film pattern 17 as a mask. Thereby an X-ray mask having a flat and uniform antireflection film can be formed.</p>