SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,申请号US201615150597-传众专利搜索

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：US2016372419(A1)

申请号：US201615150597

申请日期：2016.05.10

申请公布日期：2016.12.22

申请人：

Renesas Electronics Corporation

发明人：TSUNEMINE Yoshikazu;IGARASHI Takayuki

分类号：H01L23/522;H01L23/532;H01L21/768;H01L23/528

主分类号：H01L23/522

地址：Tokyo JP

摘要：A semiconductor device, in which an increase in the size of a product can be suppressed and a withstand voltage between wiring layers can be improved, and a manufacturing method thereof are provided. A discontinued part, in which the interface between an interlayer insulating film and a passivation film is discontinued, is formed between a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween. Both the interlayer insulating film and the passivation film face an air gap in the discontinued part.

主权项：1. A semiconductor device comprising: a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween; a first insulating film that comes in contact with one of lower surfaces and upper surfaces of both the first wiring layer and the second wiring layer; and a second insulating film that comes in contact with the first insulating film as well as side surfaces of both the first wiring layer and the second wiring layer, wherein a discontinued part, in which an interface between the first insulating film and the second insulating film is discontinued, is formed between the first wiring layer and the second wiring layer, and at least one of the first insulating film and the second insulating film faces an air gap in the discontinued part.