ACOUSTIC RESONATOR STRUCTURE WITH INCLINED C-AXIS PIEZOELECTRIC BULK AND CRYSTALLINE SEED LAYERS,申请号US201615293082-传众专利搜索

ACOUSTIC RESONATOR STRUCTURE WITH INCLINED C-AXIS PIEZOELECTRIC BULK AND CRYSTALLINE SEED LAYERS

申请公布号：US2017111028(A1)

申请号：US201615293082

申请日期：2016.10.13

申请公布日期：2017.04.20

申请人：

Qorvo US, Inc.

发明人：McCarron Kevin;Belsick John

分类号：H03H9/205;H03H9/125;H03H9/02

主分类号：H03H9/205

地址：Greensboro NC US

摘要：Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

主权项：1. An acoustic resonator structure comprising: a substrate; at least one first electrode structure supported by the substrate; a crystalline seed layer arranged over the substrate and the at least one first electrode structure; a hexagonal crystal structure piezoelectric material bulk layer arranged over the crystalline seed layer; and at least one second electrode structure arranged over at least a portion of the hexagonal crystal structure piezoelectric material bulk layer; wherein at least 50% of the hexagonal crystal structure piezoelectric material bulk layer comprises a c-axis having an orientation distribution predominantly in a range of from 25 degrees to 50 degrees relative to normal of a face of the substrate.