Method and apparatus for photomask plasma etching

申请公布号：US8568553(B2)

申请号：US201113045239

申请日期：2011.03.10

申请公布日期：2013.10.29

申请人：

KUMAR AJAY;CHANDRACHOOD MADHAVI R.;LEWINGTON RICHARD;BIVENS DARIN;SABHARWAL AMITABH;PANAYIL SHEEBA J.;OUYE ALAN HIROSHI;APPLIED MATERIALS, INC.

发明人：KUMAR AJAY;CHANDRACHOOD MADHAVI R.;LEWINGTON RICHARD;BIVENS DARIN;SABHARWAL AMITABH;PANAYIL SHEEBA J.;OUYE ALAN HIROSHI

分类号：H01L21/306

主分类号：H01L21/306

摘要：A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.

(A) ;BIOLOGICAL PURE-CULTURED PRODUCT OF STREPTOMYCES SANDAENSIS

中堂及对联

包装盒(5)

称重器

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