CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY,申请号WO2011US52292-传众专利搜索

CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY

申请公布号：WO2012040158(A2)

申请号：WO2011US52292

申请日期：2011.09.20

申请公布日期：2012.03.29

申请人：

NOVELLUS SYSTEMS INC.;WU, LIQI;KARIM, ISHTAK;QIU, HUATAN;PARK, KIE-JIN;ZHOU, CHUNMING;COLINJIVADI, KARTHIK

发明人：WU, LIQI;KARIM, ISHTAK;QIU, HUATAN;PARK, KIE-JIN;ZHOU, CHUNMING;COLINJIVADI, KARTHIK

分类号：C23C14/35

主分类号：C23C14/35

摘要：A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.