COMPOSITION AND METHOD TO POLISH SILICON NITRIDE
申请公布号:SG170108(A1)
申请号:SG20110017944
申请日期:2007.03.06
申请公布日期:2011.04.29
发明人:CHEN, ZHAN;VACASSY, ROBERT;CARTER, PHILLIP;DYSARD, JEFFREY
摘要:The inventive chemical-mechanical polishing composition comprises, and has a pH of 1 to 6. The inventive method of polishing a substrate involves the use of the aforesaid polishing composition and is particularly useful in polishing a substrate containing silicon nitride, (a) an abrasive, (b) 0.1 mM to 10 mM malonic acid, (c) 0.1 mM to 100mM of an aminocarboxylic acid, (d) 0.1 mM to 100mM sulfate ion, and (e) water. No suitable figure
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