METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

申请公布号：KR20070005793(A)

申请号：KR20050060810

申请日期：2005.07.06

申请公布日期：2007.01.10

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：KIM, YOON HAE;KIM, YONG SHIK

分类号：H01L21/28

主分类号：H01L21/28

摘要：A method for fabricating a metal wire of a semiconductor device is provided to stably forming a copper wire having no voids by depositing a copper seed layer conformally. A lower wire(112) is formed on a semiconductor substrate(110). An interlayer dielectric(116) having an opening unit is formed on the whole upper portion of the semiconductor substrate. A barrier metal layer(120) is formed according to an upper surface of the interlayer dielectric and an inner surface of the opening unit. A copper seed layer(122) is formed on the barrier metal layer. The copper seed layer is wholly etched. Additional copper seed layers are formed. The copper seed layer is formed by sputtering.

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