Electroluminescence display device with a double gate type thin film transistor having a lightly doped drain structure,申请号US20000487004-传众专利搜索

Electroluminescence display device with a double gate type thin film transistor having a lightly doped drain structure

申请公布号：US6781155(B1)

申请号：US20000487004

申请日期：2000.01.19

申请公布日期：2004.08.24

申请人：

SANYO ELECTRIC CO., LTD.

发明人：YAMADA TSUTOMU

分类号：G09F9/30;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H05B33/00;H05B33/12;H05B33/14;H05B33/26;(IPC1-7):H01L29/04

主分类号：G09F9/30

摘要：An organic EL display device including a first TFT (30) for switching operation, a second TFT (40) for driving an organic EL element, and an organic EL element (60) having an anode (61), a cathode (66), and a light emissive element layer (65) sandwiched between these electrodes. The first TFT (30) has an n-channel and an LDD structure, exhibiting a high-speed response and superior retaining characteristics. The second TFT (40) has a p-channel, and therefore exhibits superior current controllability. By combining these two types of TFTs to drive the organic EL element for each pixel, a high ON current can be achieved with a reduced leakage current, thereby producing a quality gradation display.