Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby,申请号EP20010110324-传众专利搜索

Process for reduction of orientation-dependent oxidation in trench structures and semiconductor memory device produced thereby

申请公布号：EP1150349(A2)

申请号：EP20010110324

申请日期：2001.04.26

申请公布日期：2001.10.31

申请人：

INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人：GRUENING VON SCHWERIN, ULRIKE;JAMMY, RAJARAO;TEWS, HELMUT H.

分类号：H01L27/108;H01L21/8242;(IPC1-7):H01L21/824

主分类号：H01L27/108

摘要：<p>A process for forming an oxide layer on a sidewall of a trench in a substrate. The process comprises the steps of forming the trench in the substrate, forming a nitride interface layer over a portion of the trench sidewall, forming an amorphous layer over the nitride interface layer, and oxidizing the amorphous layer to form the oxide layer. The process may be used, for example, to form a gate oxide for a vertical transistor, or an isolation collar. The invention also comprises a semiconductor memory device comprising a substrate, a trench in the substrate having a sidewall, an isolation collar comprising an isolation collar oxide layer on the trench sidewall in an upper region of the trench, and a vertical gate oxide comprising a gate oxide layer located on the trench sidewall above the isolation collar. The isolation collar oxide layer is disposed over an isolation collar nitride interface layer between the isolation collar oxide layer and the trench sidewall, the gate oxide layer is disposed over a gate nitride interface layer between the gate oxide layer and the trench sidewall, or both.</p>