METHOD OF PRODUCING P-TYPE LAYER IN N-TYPE SILICON CHIPS

申请公布号：PL328986(A1)

申请号：PL19980328986

申请日期：1998.10.02

申请公布日期：2000.04.10

申请人：

INSTYTUT TECHNOLOGII ELEKTRONOWEJ

发明人：JUNG WOJCIECH;ANTONOWA IRINA;MISIUK ANDRZEJ

分类号：H01L21/265;H01L21/34;H01L21/425;(IPC1-7):H01L21/265

主分类号：H01L21/265

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