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IMAGE SENSOR

申请公布号:JPS59210776(A)

申请号:JP19830085214

申请日期:1983.05.14

申请公布日期:1984.11.29

申请人:
SUMITOMO DENKI KOGYO KK

发明人:ONO KOUZOU;OOOKA AKIHIRO;WADA YUTAKA

分类号:G02B27/00;H01L27/146;H04N5/30;H04N5/335;H04N5/372

主分类号:G02B27/00

摘要:PURPOSE:To obtain a picture with high quality by using a substrate made of glass or the like through which light is transmitted as a convexed curved surface structure substrate and forming a transparent electrode layer, an amorphous silicon layer of p-i-n structure and a sensor mechanism comprising a back side electrode on the substrate. CONSTITUTION:The amorphous silicon layer 7 consists of a (p) layer 10, an (i) layer 11 and an (n) layer 12 and the thickness is, e.g., <=1mum. Lots of unit elements are provided in matrix longitudinally and laterally. The electrode 8 is led out at each element. Each element of the amorphous silicon can be separated and since the specific resistivity is large, when the thickness is 1mum and the interval between elements is 10mum, the series impedance is large and it is not especially necessary to separate each element. The boundary between the transparent electrode layer 6 and the amorphous silicon layer 7 becomes a photodetecting face 13. The light passes through a lens L, transmits through the glass substrate 5 and the transparent electrode 6 are reaches the photodetecting face 13. Since the photodetecting face 13 is matched to the curve of image, a picture without the out-of-focus even at the circumference of an image is obtained.

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