FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF,申请号US201313861584-传众专利搜索

FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF

申请公布号：US2014203369(A1)

申请号：US201313861584

申请日期：2013.04.12

申请公布日期：2014.07.24

申请人：

INTERNATIONAL CORP. SEMICONDUCTOR MANUFACTURING

发明人：FUMITAKE MIENO;YIN HUAXIANG

分类号：H01L29/66;H01L29/78

主分类号：H01L29/66

地址：US

摘要：A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate, and forming a plurality of fins with hard mask layers and an isolation structure. The process also includes forming a first dummy gate layer on the fins and the isolation structure, and polishing the first dummy gate layer until the hard mask layer is exposed. Further, the method includes removing the hard mask layer to expose a top surface of the fins, and forming a second dummy gate material layer on the first dummy gate material layer. Further, the method also includes etching the second dummy gate layer and the first dummy gate layer to form a dummy gate on each of the fins.

主权项：1. A method for fabricating a fin field-effect transistor, comprising: providing a semiconductor substrate; forming a plurality of fins and an isolation structure on top of the semiconductor substrate, wherein the fins are covered with a hard mask layer; forming a first dummy gate layer on the fins and the isolation structure; polishing the first dummy gate layer using the hard mask as a polishing stop layer and until the hard mask layer is exposed; removing the hard mask layer to expose a top surface of the fins; forming a second dummy gate layer on the first dummy gate layer; and etching the second dummy gate layer and the first dummy gate layer to form a dummy gate on each of the fins.