LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, AND MANUFACTURING METHODS THEREOF,申请号JP20110125375-传众专利搜索

LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, AND MANUFACTURING METHODS THEREOF

申请公布号：JP2011193024(A)

申请号：JP20110125375

申请日期：2011.06.03

申请公布日期：2011.09.29

申请人：

SUMITOMO ELECTRIC IND LTD

发明人：INOGUCHI YASUHIRO;MIURA KOHEI;INADA HIROSHI;NAGAI YOICHI

分类号：H01L31/10

主分类号：H01L31/10

摘要：<P>PROBLEM TO BE SOLVED: To provide a light-receiving element, and a light-receiving element array, which have photosensitivity in a near infrared region, are easy to get excellent crystallinity and form a one-dimensional or two-dimensional array thereof with high precision, and lower a dark current, and also to provide manufacturing methods thereof. <P>SOLUTION: The light-receiving element has group III-V compound semiconductor laminated structure including a pn junction 15 in a light-receiving layer 3. The light-receiving layer has a multiple quantum well structure of the group III-V compound semiconductor. The pn junction 15 is formed by allowing impurity elements to be selectively diffused in the light-receiving layer. Impurity density in the light-receiving layer is not higher than 5×10<SP>16</SP>cm<SP>-3</SP>. <P>COPYRIGHT: (C)2011,JPO&INPIT